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182346 :: อุปกรณ์สารกึ่งตัวนำ (Semiconductor Devices)
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กระดานข่าว
Group 1: Capacitance-Voltage measurements of a metal-oxide-semiconductor structure
Group 2: Hot-Point probe and Four-Point probe measurements of thin films
Group 3: X-ray diffraction of a nanostructured material
Group 4: Determination of flat band potential and charge carrier density for a WO3 nanofiber electrode
Group 5: Current-voltage measurements of a WO3 nanofiber photoanode
Group 6: Energy band gap determination of WO3 nanofibers
Group 7: Impedance spectroscopy measurement of WO3 nanofiber gas sensor
Group 8: Determination of the incident photon-to-electron conversion efficientcy (IPCE) of a WO3 nanofiber photoanode
Topic 1
Topic 2
Lecture 1 (11/1/2010): Introduction
Lecture 2 (11/3/2010): Carrier modeling
Lecture 3 (11/8/2010): Equilibrium carrier concentrations
Lecture 4 (11/10/2010): Drift
Lecture 5 (11/15/2010): Diffusion
Lecture 6 (11/17/2010): Recombination-generation processes
Lecture 7 (11/22/2010): P-N junction diode
Lecture 8 (11/24/2010): The depletion region electrostatics and carrier flow
Lecture 9 (11/29/2010): The ideal diode I-V characteristics
Lecture 10 (12/1/2010): Deviations from the ideal diode
Lecture 11 (12/8/2010): Reverse-biased junction admittance
Lecture 12 (12/13/2010): Diffusion capacitance and switching (transient) response
Lecture 13 (12/15/2010): Metal-semiconductor contacts
Lecture 14 (1/17/2011): Bipolar junction transistors (BJTs)
Lecture 15 (1/19/2011): The ideal junction transistor
Lecture 16 (1/26/2011): Field effect devices
Topic 3
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182346
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182346 :: อุปกรณ์สารกึ่งตัวนำ (Semiconductor Devices)
นภัสถ์ ไตรโรจน์
ภาควิชาวิศวกรรมไฟฟ้า คณะวิศวกรรมศาสตร์
182346
Teacher:
รศ.นภัสถ์ ไตรโรจน์
Skill Level
:
Beginner